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Device description The device is fabricated in a Si-doped GaAs/AlGaAs heterostructure grown by molecular-beam epitaxy. The 2DEG resides 110 nm below the surface, with electron density 2.8 × 1011 cm−2 and mobility 9 × 105 cm2 V−1 s−1. Metallic gates (Ti, 3 nm; Au, 14 nm) are deposited on the surface of the semiconductor using electron-beam lithography. All measurements are performed at a temperature of about Continue Reading